2N7002T
Manufacturer:
On Semiconductor
Mfr.Part #:
2N7002T
Datasheet:
Description:
MOSFETs SOT-523-3 SMD/SMT N-Channel number of channels:1 200 mW 60 V Continuous Drain Current (ID):115 mA
| Parameter | Value |
|---|---|
| Length | 1.7 mm |
| Width | 980 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 7.5 Ω |
| Height | 780 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 200 mW |
| Power Dissipation | 200 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 50 pF |
| Continuous Drain Current (ID) | 115 mA |
| Rds On Max | 7.5 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 5.85 ns |
| Turn-Off Delay Time | 12.5 ns |
| Element Configuration | Single |
| Drain to Source Resistance | 2 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.76 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
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